Crosstalk Enhancement in ۳۲ nm FD SOI MOSFET using HR Substrate and Multilayer BOX

In this paper, the crosstalk in ۳۲ nm UTB SOI MOSFET is examined by using a new structure, a high resistivity substrate, and a multilayer BOX (SiO۲-Diamond). The electrical and thermal characteristics of the conventional SOI and a multilayer BOX SOI are compared, and it is concluded that parasitic capacitances and crosstalk are improved by incorporating multilayer BOX to a HR Substrate. In a conventional HR FD SOI, crosstalk is approximately -۱۲۱dB, while by incorporating multilayer BOX substrate and increasing the thickness of the Diamond to ۱۰۰nm, crosstalk can be reduced by ۲۰%.

کلیدواژه ها:

ultra thin body silicon-on-insulator MOSFET ، en ، parasitic capacitance ، high resistivity substrate ، crosstalk ، diamond