Temperature dependence of detectivity in Graphene/Si Schottky diode

The discovery of two-dimensional (۲D) materials such as graphene has attracted the interests of the scientific community in the recent years. Graphene is still one the most studied materials for its remarkable properties. The hybrid structures of graphene with semiconductor materials like silicon (G/Si heterostructures) have been studied extensively in the past years for applications such as photodiodes, photodetectors, and solar cells, with a growing focus on efficiency and performance. In this article, the graphene-silicon sample was first made and the current-voltage curve was measured at different temperatures and different intensities of ۸۵۰ nm laser light. Then, the dependence of Noise equivalent power (NEP) and detectivity of graphene-Silicon sample in terms of temperature has been obtained. The results show that with increasing temperature, NEP increases and detectivity decreases.

کلیدواژه ها:

graphene ، Silicon ، Schottky diode ، detectivity