Reliable and High Voltage Device with widebandgap energy material for the PowerApplications

A novel LDMOS transistor with twodifferent windows is proposed in this paper. One of thewindows is located in the drift region with Si۳N۴material. The other window is considered under thedrift region with GaN material which has widerbandgap than silicon. These different materials help tomodify electric field and obtain high breakdownvoltage. Also, the simulation with ATLAS simulatorshows that the proposed Si۳N۴ and GaN windows in SOILDMOS (SNG-SOI) has better performance in terms ofhot electron effect, current capability and on resistanceas it is compared to the Conventional SOI LDMOStransistor.

کلیدواژه ها:

LDMOS ، GaN ، Breakdown voltage ، Current ، Temperature.