Investigation of Electrical Characteristics of Submicron Silicon Carbide MOSFETs

In this paper, we exhibit unique features of Silicon Carbide Field Effect Transistors (SiC MOSFET) in sub-micron dimensions and compare these features with conventional Si MOSFETs. Using two-dimensional simulation, we have investigated the improvement in SiC device performance as compared to Si MOSFETs. Electrical characteristics including forward characteristics, subthreshold slope, drain conductance, Drain Induced Barrier Lowering (DIBL) for this device are discussed