Modeling of Carbon Nanotube Interconnects and Comparative Analysis with Cu Interconnects

Carbon Nano Tubes (CNTs) have been widely proposed as interconnect fabric for nano and very deep submicron(silicon -based) technologies due to their robustness to electromigration. This paper provides an overview of modeling of carbon Nanotube Interconnects and analysis power. Using the available models, we simulated and analyzed the power CNT interconnects is compared at different interconnect levels. It is found that CNT interconnects do not out-perform Cu wire at local and global and intermadat interconnect level. However, Cu interconnect have less power than CNT interconnect at intermediate and global and local interconnect level. results show in this paper.

کلیدواژه ها:

carbon nanotube (CNT) ، interconnects ، circuit modeling.