Numerical Analysis of Ballistic Ultrathin Graphene Nanoribbon Field Effect Transistors

We have employed a self-consistent solution of openboundary Schrodinger equation based on the non-equilibrium Green’s function formalism coupled to Poisson’s equation inorder to investigate some important characteristics of graphene nanoribbon FETs. Our simulations enable us to compareparameters such as Ion, Ioff and on/off current ratios as well as subthreshold swing and gm in different channel widths and channel lengths. Our results indicate that given the ability to fabricate perfectly patterned few-nanometers wide GNRs, these devices may be able to outperform the current silicon FETs

کلیدواژه ها:

Graphene Nanoribbon FETs ، Non-Equilibrium Green’s Function ، I-V characteristics ، Output parameters