Sol-Gel Synthesis and Investigation of (L a, Sr) CoO ۳ (LSCO ) Thin Fil ms

It is r eported that SiO۲ thinner than ۱nm may not have the insulating properties require d of a gate dielectric. It i s mostly interface, with little if any bulk charac ter [۱, ۲]. A shrinking o f this thickness down t o less than ۱ nm for the next gene ration will led to a couple of ord ers of magnitude increase in tunnelling as well as leaka ge currents. A very ob vious alter native material is La۲O۳, due to its high dielectric constant, wide band gap and good thermal sta bility on silicon substrat e. We have thus synthesized LSCO and studied its nanostructural properties by using XRD an d FTIR tech niques.

کلیدواژه ها:

Nano transistor ، Sol-gel method ، LSCO ، XRD ، FTIR