v Hayati - Department of physics, University of Mazandaran, Ba bolsar, Iran
a Bahari, - Department of physics, University of Mazandaran, Ba bolsar, Iran
a. Ramzannezh ad - Department of physics, University of Mazandaran, Ba bolsar, Iran
m Ghanbari - Dep artment of Physics, Islamic Azad University, Centeral T ehran Branch, Iran
k Tag havi - Department of Physics, University of Mazandaran, Babolsar, Iran

It is r eported that SiO۲ thinner than ۱nm may not have the insulating properties require d of a gate dielectric. It i s mostly interface, with little if any bulk charac ter [۱, ۲]. A shrinking o f this thickness down t o less than ۱ nm for the next gene ration will led to a couple of ord ers of magnitude increase in tunnelling as well as leaka ge currents. A very ob vious alter native material is La۲O۳, due to its high dielectric constant, wide band gap and good thermal sta bility on silicon substrat e. We have thus synthesized LSCO and studied its nanostructural properties by using XRD an d FTIR tech niques.

Nano transistor, Sol-gel method, LSCO, XRD, FTIR