Nano structural LSCO as a good d ielectric

Nonv olatile memories based on ferroele ctric capacitors show much promise because they exhibit a spontan eous polarization that can be rev ersed by an electric field [۱]. Among ferroelectric materials, La (Sr,Co)O۳ is extensively researched. Although LSCO has many advantages such as high rem anent polarization, lo w temperatu re crystalli zation. The most important proble m of LSCO-based capa citors was the polariz ation fatigue. The results of recent research in dicate that t he introduction of LSCO nanoparticles in silicon matrix res ults in change of dielectric structure of a number of insulator materials [ ۲].Exper imental Procedures an d Details:As st arting precu rsors, reagent grade compounds were empl oyed: (La۰.۵Sr۰.۵) CoO۳, (La (No۳)۳ ۶H۲O), (Co (No۳)۲۶H۲O), (Sr (N o۳)۲) as LS CO sources, absolute p olyvinyl alcohol reagen t (PVA) as solvent. Th ese precursors were di ssolved in distilled wat er at ۱۰۰ ۰C with the La/Sr/Co ratio of ۱/۱/۲, followed by the addition of ۰-۵wt% p olyvinyl alc ohol (PVA) . The resulting solution (after ۶۵-۷۲ h stirring) was refluxed for ۲۴ h a t ۱۱۰-۱۲۰ ۰C. During reflux, the solution concentration wa s modified t o be ۰.۵ M b y distillation. Shortly a fter that, prepared colloi dal solution was dried i n ۸۳ ۰C in oven over ۵ days. The pr ocedures ha ve been rep eated at ۳۰۰,۵۰۰, and ۹۰ ۰۰C anneal ed temperatu res.