Quantum Modelling and simulation of 2×4 decoder based on the QWMODFET technology

The quantum well MODFET (QWMODFET) has two 2DEG layers. We paralleled these two thin layers using diffused Au/Ge/Ni ohmic contacts. Two back and top controlling gates used on both sides of the structure to control electrical properties of 2DEG layers separately. In this case there are two transistors in the same position. So it is possible to design some basic gates such as NAND by only one QWMODFET. Using this method it is possible to design and fabricate smaller integrated circuits in comparison with other existing methods. The total delay time of a circuit is decreased. When the scale of an IC is decreased the total quantity of a noise density is reduced in the output. The 2×4 decoder has been designed based on the QWMODFET to show the ability of the suggested model. For computerized simulation of designed circuit we used quantum hydrodynamic model and numerical methods such as Newton-Raphson. imulation results showed that the delay time and the spectral noise of the QWMODFET based decoder have reduced in comparison with the other conventional methods such as CMOS

کلیدواژه ها:

Quantum hydrodynamic ، Newton-Raphson ، quantum modelling