Modeling A Graphene-based Resoanant Tunneling Field Effect Transistor

In a planar FET two dielectric layers are placed on the top and bottom of the graphene ribbon and a metallic gate is located on its top at the channel region between two based on graphene. The source and drain regions of graphene are highly p-type doped. A GNR field effect transistor with p-type source and drain and n-type channel is modeled using the non-equilibrium Green’s function formalism. According to our results, for Short channels, the subthreshold current exhibits an oscillatory behavior with the change of the gate voltage. As in other resonant tunneling transistors, the modeled FET brings regions of negative differential resistance. The discrete density of states in the channel results from the constructed n-type channel island between p-type source and drain with thin barriers formed by the energy gap

کلیدواژه ها:

FET ، Graphene ، NEGF ، resonant Tunneling Transisto.