When an electric field is applied to the (CNTFET nanotransistor), the carbon nanotube located between the source and the drain contains the moving charge

Note: The lack of precise control over the positioning of CNTs during CNFET manufacturing causes irregularity in the nanotubes, less than half percent of the nanotubes made on the single crystal diamond substrate are irregular.

Irregular nanotubes may cause a short circuit between output and feed. The connection between the carbon and metal nanotubes used to connect the source and drain  forms a Schottky barrier (SB) in a CNTFET. The formation of Schottky barriers in the source and drain of a transistor causes a significant reduction in the current sent in  the transistor. Therefore, for the higher operational efficiency of CNFET parts,  suitable metals are needed that can be used at the junction of Sury and Drain and  create an ohmic junction.

When the electric field is applied to the CNTFET nanotransistor, the carbon nanotube that is between the source and the drain contains the moving charge. The density of these charges is for the source, and this density is determined by the Dirac Fermi probability distribution for (Drain_Drain). The ability of carbon nanotubes to be used in gas sensors  is due to their hollowness and high contact surface. This contact surface consists of the outer wall of the nanotube  and its empty middle parts. Physico-chemical absorption of gases in nanotubes  changes their conductivity. Due to the reduction of the scale of semiconductor components and integrated circuits to the  nanometer range, the semiconductor industry will face many challenges. Downscaling causes more short channel effects, less gate control,  exponential increase in leakage currents, drastic process changes and unmanageable power densities  . CNTFET is an option for the transistor in order to have the possibility of continuing to reduce the dimensions and to  develop new structures, the carbon nanotube field effect transistor is one of  the most prominent topics in nanotechnology, carbon nanotubes.

Conclusion:

The lack of precise control over the positioning of CNTs during CNFET manufacturing causes irregularity in the nanotubes, less than half of the nanotubes made on the single crystal diamond substrate are irregular.