nMOS and GaAs (gallium arsenide) transistors ( a bipolar transistor)

Note: nMOS and GaAS (gallium arsenide) transistors use a voltage to apply to the input terminal, which is called gate, and the current passing through it is proportional to this voltage.

_{Since the operation of  nMOS and GaAS (gallium arsenide) transistors  is based on an electric field resulting from the input gate voltage (hence the name field effect), it makes the field effect transistor a voltage-based component. nMOS and GaAS (gallium arsenide) transistors are a single-pole semiconductor device whose characteristics are very similar to the similar bipolar transistor. Some of the features of this part are high efficiency, instantaneous operation, resistance and cheapness, which can be replaced in most electronic circuits with bipolar junction transistors and structurally similar (such as BJT).}

This electronic component is a bipolar transistor whose input is made of a semiconductor element  (gallium arsenide)  and is actually a combination of bipolar transistors (Mosfet) and by combining the advantages of both, it is an industrial electrical element with high speed. High switch and low input current are created.  nMOS and GaAs (gallium arsenide) transistors   are capable of switching on and off much faster, but their conduction losses are higher.  nMOS and GaAs transistors (gallium arsenide)   is a transistor that has the advantages of BGT and MOSFET together, such as:  high input impedance like MOSFET, which makes it switch to connected mode with little energy. (voltage drop and low losses like BJT) like BJTs have a small on-state voltage. In  nMOS transistors,   the current gain varies depending on the direction of the electric field and responds to electric fields of different sizes.  This results in useful electronic behavior depending on how the voltage  (or electronic field  ) is applied, which in an nMOS transistor is called (bias).