_Endohedral Nanostructures Section Bonding (Endohedral Nanostructures) and Nanotransistors

Note:  ( Endohedral nanostructures) The electronic properties of the two regions are "protected" in a special, so-called topological, different way. "And thus, a very strong new quantum state is created in the transition region.

This local electronic quantum state can now be used as a key feature for the production of specific semiconductors, metals or insulators - and possibly even as a feature in nanoelectronics. The shapes and sizes  of endohedral nanostructures are naturally determined by their composition and formation conditions. The properties  of the nanostructures in turn  determine the originality of the endohedral nanostructuresand  their possible fields of application  . The range of 1 to 1000 nm is introduced as the range of nanostructures, an  important feature ofendohedral nanostructures  is the control of self-organization processes. The range of activity  ofendohedral nanostructures  depends on the nature and shape of the nanostructure. However  , if the energy of the nanoparticle field is comparable to the energy of electromagnetic radiation and if  significant changes occur in the irradiated material within a certain wavelength range due to chemical reactions, the activity of nanoparticles  down to 100 nm will be significant.

Nano-microelectronics deals with new methods for making nano-transistors on small scales  , with dimensions of a few tens of nanometers, which is derived from the science called nanotechnology. Unlike today's nano-transistors, which behave based on the movement of a mass of electrons in a material, the new devices follow quantum mechanical phenomena at the nanoscale, in which the discrete nature of the electron can no longer be ignored. By reducing all horizontal and vertical dimensions of the transistor, the electric charge density in various areas of the nano-transistor  increases, or in other words, the number of electric charges per unit area of ​​the nano-transistor increases.

This  has two negative consequences: First, as the electric charge density increases, the possibility of electric charge discharge from the insulating areas of the transistor increases   , which can damage the transistor and cause it to fail. This is similar to the discharge of  excess electric charge between the cloud and the ground in a lightning strike, which ionizes air molecules into  negative and positive ions. Second,  as the electric charge density increases, electrons may, under the influence of the repulsive or attractive forces that have now  increased, move out of the radius of an atom and into the radius of an adjacent atom. This  is called tunneling in quantum physics. Tunneling of electrons from one atom to an adjacent atom is a phenomenon that  occurs frequently between electrons at small scales. This phenomenon is also the basis of the operation of some electronic components and some  nanoscopes.

But in a nanotransistor, this phenomenon is not a useful phenomenon, because the tunneling of electrons from one atom to the neighboring atom may  continue and cause an electric current. Although this electric current may  be very small, but because it is unwanted and unforeseen, it acts as a leakage path for the electric current  and causes changes in the electrical behavior of the nanotransistor.

Conclusion :

Nanostructures Nano structure  The electronic properties of the two regions are "protected" in a special, so-called topological, different way. "And thus, a very strong new quantum state is created in the transition region.