MBCFET" Multi-layer Nanotransistors"

Note: MBCFET multilayer nanotransistors better and voltage scalability by reducing the process node, minimizing the negative aspects of multilayer nanotransistor limitations. MBCFETs work by increasing the contact area between the transistor channel and the gate by scaling in the vertical direction, allowing for faster loading and higher current density compared to a planar design. /span>

MBCFET multilayer nanotransistors Like planar transistors, FinFET transistors eventually reach a point where they cannot scale as processing nodes shrink. In order to scale, that contact area between the channel and the gate should be increased, and the way to do this is to use multi-layer carbon nanotubes and CNTs. The nanolayers adjust the dimensions of the transistor to ensure that the gate is also under the channel, not just on the top and sides. This allows MBCFET Multilayer Nano Transistors to stack transistors vertically.

CNTs multilayer nanotubes are used in the structure of MBCFET multilayer nanotransistors.  The rate of increase in thermal power and resistance of nanotubes is proportional to the third root of the mass of atoms and molecules. Also, heating increases the strength of the nanotube and increases its tensile strength by six times, and its conductivity also increases. As a result of the collision of atoms or molecules with the carbon nanotube, its electrical resistance changes. And these effects are also present in the function and structure of the MBCFET multilayer nanotransistors. .

Conclusion :

MBCFET multilayer nanotransistors Better and voltage scalability by reducing the process node, minimizing the negative aspects of multilayer nanotransistor limitations. MBCFETs work by increasing the contact area between the transistor channel and the gate by scaling in the vertical direction, allowing faster loading and higher current density compared to a planar design. /span>