Nano lithography of stencil mask (resolution up to ۲۰ nm) in the manufacture of wafer nanowires

1 آذر 1402 - خواندن 3 دقیقه - 219 بازدید



Note: In this technique, a thin plate with designed apertures, called a stencil mask, is placed adjacent to the substrate and used in combination with material evaporation. be. Evaporated material stops at the upper surface of the stencil mask, except in the openings. So the material grows with specific patterns determined by the stencil mask.

Using appropriate stencil masks, nanopatterned materials can be grown at wafer scale in one shot. Resolution down to 20 nm has been achieved and can be used on non-conventional substrates such as rope , but this technique suffers from some problems related to deposition. Shade under the stencil mask tolerates lifetime issues due to stencil mask deterioration caused by material depositing at the edge of the holes, eventually blocking them (occlusion effect). Advances such as the use of dynamic stencil masks have increased the range of applications of this technique.



Silicon wafer substrates can be used for sample substrates, microfabrication, substrate for nanowires or biological substrates.  Useful flat bed of particles Silicone wafers linked with nanowires and  For biological applications, Si (silicon wafer) has properties similar to glass and can be used to mount or grow particles of nanowires. It can be easily wiped or used as a whole wafer for nanowire reproduction.Silicon nanowire arrays or SiNWs are vertical arrays of nanowires. The silicon wafers are flat on the crystalline silicon wafer substrate. These nanowires are made by a catalytic oxidation and dissolution of Si in the presence of metal catalyst nanoparticles - a self-organized process commonly referred to as a metal-chemically assisted process. Silicon wafers are known.



Since nano-optical devices are produced using wafer-based processes that are used in semiconductor manufacturing, this allows for flexible sharing of production capacity and allows production capacity to be shared with High volume support. Some materials can create regular, nanoscale structures under appropriate and controlled conditions - self-assembly. The problem of this approach is the lack of flexibility in the structures that can be obtained and the materials that can be used, which limits the functions that can be realized.

Conclusion :
Using appropriate stencil masks, nanopatterned materials can be grown at wafer scale in one shot. Resolution down to 20 nm has been achieved and can be used on non-conventional substrates such as rope , but this technique suffers from some problems related to deposition. Shade under the stencil mask tolerates lifetime issues due to stencil mask deterioration caused by material depositing at the edge of the holes, eventually blocking them (occlusion effect).