Energy Efficient Novel Design of Static Random Access Memory Memory Cell in Quantum-dot Cellular Automata Approach

This paper introduces a peculiar approach of designing Static Random Access Memory (SRAM) memory cell in Quantum-dot Cellular Automata (QCA) technique. The proposed design consists of one 3-input MG, one 5-input MG in addition to a (2×1) Multiplexer block utilizing the loop-based approach. The simulation results reveals the excellence of the proposed design. The proposed SRAM cell achieves 16% and 15% improvement in terms of total number of Cell counts and Area. Similarly, the proposed design structure realizes the overall power dissipation savings up to 35.3% at maximum energy dissipation of circuit, 38.6% at average energy dissipation of circuit, 36.1% at minimum energy dissipation of circuit, 36.4% at average energy dissipation of circuit and 40.1% at average switching energy dissipation compared to the latest reported designs. The power analysis and structural analysis of the proposed design is compared with its state-of-the-art counterpart designs, using QCAPro and QCADesigner 2.0.3 tools. The proposed QCA based SRAM cell design can be taken as a base design in building an ultra-low power information generating systems like Microprocessors.

کلیدواژه ها:

Quantum-dot Cellular Automata ، inverter ، Majority Gate ، Static Random Access Memory