Investigation of Hole Etching Depth Effect on Buried Tunnel Junction Photonic Crystal VCSEL Heat Sources

In this paper, for the first time, the effect of the hole etching depth on the heat sources of the active region in 1570 nm InGaAsP buried tunnel junction photonic crystal vertical-cavity surface-emitting laser (BTJ-PhC VCSEL) is investigated and discussed. The active region of BTJ-PhC VCSEL includes from six quantum wells (QWs) with 5.5nm In0.76Ga0.24As0.82P0.18 and 8nm In0.48Ga0.52As0.82P0.18 as the well and barrier, respectively. Also, the strain-compensated InGaAsP multi-quantum wells sandwiched between GaAs/AlGaAs and GaAs/AlAs distributed Bragg reflectors (DBRs) that are fused on both sides of the InP spacer. This paper provides key results of the various elements of heat sourcesupon the hole etching depth, including the Joule heat power, the Peltier-Thomson heat power and the recombination heat power. Results suggest that, the increasing of the hole etching depth, decreases the Joule and Peltier-Thompson heat powers however increases the recombination heat power into quantum wells region.

کلیدواژه ها:

Hole etching depth ، Multi quantum well (MQW) ، Buried-tunnel-junction (BTJ) ، Heat sources ، Photonic Crystal ، Vertical-cavity surface-emitting lasers (VCSELs).