Thermal Analysis of an Optimal Buried-Tunnel-Junction-Based VCSELs at 1550 nm Wavelength

In this paper, thermal analysis of optimal 1550 nm AlGaInAs multi quantum well (MQW) buried-tunnel-junction vertical-cavity surface-emitting lasers (BTJ-VCSELs) were investigated with the aid of simulations. For optimal design of devices with 6 nm diameter and 10 nm thickness for each layer of AlGaInAs BTJ, the slope efficiency of the devices decreases from 0.396 to 0.227 W/A over the temperature range of 290–380 K. Results suggest that, the optimized AlGaInAs BTJ-VCSELs enable simultaneously higher quantum tunneling probability, lower optical free-carrierabsorption loss, lower threshold gain and highest operating temperature

کلیدواژه ها:

Thermal Analysis ، Multi quantum well (MQW) ، Buried-tunnel-junction (BTJ) ، Long wavelength ، Verticalcavity surface-emitting lasers (VCSELs).