Non-Equilibrium Green’s Function Calculations for Double Gate Coaxial Carbon Nanotube FETs

A coaxial double gate Schottky barrier field effect transistor (DG-SB-CNTFET) is investigated and compared to conventional single gate structure. In order to derive electrical characteristics, the charge density on the surface of the carbon nanotube and the transmission coefficient through Schottky barriers is calculated using non equilibrium Green’s function formalism (NEGF) along with self consistent calculations that include the Poisson equation. We have shown that the main advantage of the proposed structure is to reduce the ambipolarity and reduction of off-current which make it suitable for future logic applications

کلیدواژه های Non-Equilibrium Green’s Function Calculations for Double Gate Coaxial Carbon Nanotube FETs:

NEGF ، Poisson ، CNTFET ، Shottcky Barrier