IMPROVEMENT OF PHOTOELECTRIC PARAMETERS OF THE Mo/CuInSe2/Cd1-xZnxS1-ySey ELECTRODEPOSITED SOLAR CELLS BY THERMAL ANNEALING IN ARGON ATMOSPHERE

Thin film Mo/CuInSe2/Cd1-xZnxS1-ySey solar cells with 0.1 ≤ x ≤ 0.9 and 0 ≤ y ≤ 0.2 were prepared by the method of electrochemical deposition. Photoelectric properties of these structures are investigated depending on the x, y and thermal annealing regime in argon atmosphere. A model for the explanation of photoelectric memory in them has been offered. Under AM1.5 the photoelectric parameters of cells annealed at 140 ÷ 160°C for 11 ÷ 13 min were Voc = 0.58 V, Jsc = 18 mA/cm2, respectively.

کلیدواژه ها:

electrochemical deposition ، thin film solarcells ، thermal annealing ، photoelectric memory ،