INTERPHASE INTERACTIONS IN THE STRUCTURES OF METAL GaAs (InP) WITH SINGLE COMPONENT METALLIZATION

Film structures MP have the high level of off-balance, one of the demonstration of which is the formation on MFG of the extensive conductive spheres, being spatially inhomogeneous on the chemical composition and structure. It is assumed that for the transmission of M-GaAs, formed on the condensation of the metal on the real oxidized surface of the semiconductor through dominating process, determining the characteristics of the conductive layer is the interdiffusion the component of the heterostructure with the privilege of the involvement Ga to the layer of metallization (1).

کلیدواژه ها:

Interphase ، Metallization ، Isoelectron