The Effects of Scaling on the Sub-threshold Swing of Ferroelectric Field Effect Transistor

In this paper, the performance of Ferroelectric field effect transistor (FeFET) with using TCAD simulation is investigated. First, FeFET is compared with conventional FET using TCAD simulations. It found that sub-threshold swing for FeFET is lower than conventional FET. The thickness of Ferroelectric is changed and its effects on theFeFET is studied then compared with conventional FET. Sub-threshold swing and threshold voltage is compared for both transistor. At the end, the transistor is scale down and FeFET in small scale is investigated.

کلیدواژه ها:

Ferro-electric ، FET ، Sub-threshold swing ، Silvaco.