Improved efficiency of quantum dot sensitized solar cells using Cu2O/TiO2 nanocomposite photoanodes
محل انتشار: شانزدهمین کنگره ملی مهندسی شیمی ایران
سال انتشار: 1397
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 539
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شناسه ملی سند علمی:
NICEC16_011
تاریخ نمایه سازی: 7 خرداد 1398
چکیده مقاله:
Several quantum dot sensitized solar cells (QDSSCs) were fabricated by doping Cu2O nanoparticles (NPs) into the TiO2 photoanode pastes in order to improve their efficiencies. The QDSSCs were made using the CuS counter electrode and sulfide/polysulfide electrolyte. The inclusion of Cu2O NPs in the photoanodes of both CdS and CdSe QDSSCs was found to increase the photocurrent and efficiency. Results indicated that the photovoltaic parameters of the optimized CdSe cell (η=3.01%, JSC=10.2 mA.cm–2, VOC=0.59 V, FF=0.50) were boosted compared with those of the reference cell which was free of Cu2O (η=1.88%, JSC=7.0mA.cm–2, VOC=0.56V, FF=0.48) signifying about 60, 46 and 5% improvements in efficiency, current density and open-circuit voltage, respectively. The lowest intensity of the photoluminescence (PL) peak for the cell fabricated using 0.03% Cu2O doped TiO2 suggested that it had the least charge recombination and the easiest electron transfer which was confirmed by the J-V and efficiency data. Thus, addition of 0.03%wt Cu2O as a dopant was very appropriate to attain suitable photocurrent efficiency for the QDSSCs because it could be used in a minimum amount to improve the electron transport, drop the recombination and increase the cell efficiency.
کلیدواژه ها:
نویسندگان
Laya Noori
Department of Chemistry, Amirkabir University of Technology (Tehran Polytechnic), P.O. Box:۱۵۸۷۵-۴۴۱۳, Tehran, Iran
Vahid Hoseinpour
Department of Chemistry, Amirkabir University of Technology (Tehran Polytechnic), P.O. Box:۱۵۸۷۵-۴۴۱۳, Tehran, Iran.
Amin Alizadeh
Department of Chemistry, Amirkabir University of Technology (Tehran Polytechnic), P.O. Box:۱۵۸۷۵-۴۴۱۳, Tehran, Iran.
Zahra Shariatinia
Department of Chemistry, Amirkabir University of Technology (Tehran Polytechnic), P.O. Box:۱۵۸۷۵-۴۴۱۳, Tehran, Iran.