A Proposed Structure for Reducing Bias Voltages in Nanoscale Impact Ionization MOS Devices

In order to decrease bias voltages in nanoscale IMOS devices we have proposed a new double gate IMOS structure with SiGe channel (DG-SGOI IMOS) in this paper. In comparison with single gate SOI IMOS and our previously reported Single Gate SiGe-On-Insulator IMOS (SGOI IMOS) structures, this device can provide even more reduction in the source voltage as well as in threshold voltage.

کلیدواژه ها:

Nanoscale IMOS ، Bias Voltage Reduction ، Silicon-Germanium ، Double Gate