Physical and Photoelectrochemical Properties of Ce-doped ZnO Nanocomposite thin films

Ce-doped ZnO and pure ZnO nanocomposite thin films prepared by sol-gel method at annealing temperature of 500 ºC. The samples were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV-vis spectroscopy. The XPS shows that three major metal ions of Ce3+, Ce4+and Zn2+ coexist on the surface. The XRD measurements indicate that the ZnO thin films have a hexagonal wurtzite structure,and CeO2 crystallites appear in Ce-doped ZnO nanocomposite thin films.The addition of Ce to ZnO thin film increased photocurrent density at applied potential of 0.6V to almost double in photoelectrochemical reaction

کلیدواژه ها:

Ce-doped ZnO ، Sol-gel ، Photoelectrocemical cell ،