Design and Simulation of a Highly Efficient InGaN/Si Double-Junction Solar Cell

سال انتشار: 1396
نوع سند: مقاله ژورنالی
زبان: انگلیسی
مشاهده: 378

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شناسه ملی سند علمی:

JR_JECEI-5-2_008

تاریخ نمایه سازی: 20 آبان 1397

چکیده مقاله:

A solar cell is an electronic device which not only harvests photovoltaic effect but also transforms light energy into electricity. In photovoltaic phenomenon, a P-N junction is created to form an empty region. The presented paper aims at proposing a new highly efficient InGaN/Si double-junction solar cell structure. This cell is designed to be used in a real environmental situation, so only structural parameters are optimized. In the present structure, a thin layer of Cd-S is used as the anti-reflector window layer. The cell is simulated using ATLAS-SILVACO software and its maximum efficiency is computed to be 37.23%. Considering the supposed structure, the findings show that the efficiency of this solar cell, which is 37.32%, is so far the highest reported efficiency amongst all solar cells

نویسندگان

Seyed Milad Ahmadi

Department of Electrical Engineering, Kermanshah Branch, Islamic Azad University, Kermanshah, Iran.

Fariborz Parandin

Department of Electrical Engineering, Kermanshah Branch, Islamic Azad University, Kermanshah, Iran.