Analytically investigation localizing defect modes in 1D photonic crystal containing Left and Right-Handed material defect

سال انتشار: 1396
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 407

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تاریخ نمایه سازی: 7 اسفند 1396

چکیده مقاله:

In this paper, we theoretically investigate the dispersion behavior of localized defect modes supported by a defect layer sandwiched within two symmetric semi-infinite one-dimensional photonic crystals (1D PCs) composed of left- handed (LH) and right-handed (RH) materials defect. We used an analytical direct matching procedure within the Kronig-Penny model to analyze the dispersion properties of the localized defect states. We show that the characteristics of defect modes created in the 1D PC with LH layers are significantly different from those created in the structure composed of RH layers. Also, we show that the dispersion of defect mode for the RH material are positive while for the left handed material these modes can be negative or nearly zero in a wide range of radiation angle and frequency. In addition, we propose an approach to calculate the applied electric field intensity that leads to dispersion of defect modes from forward to backward when the parameters of the defect layer vary.


Behnam Kazempour

Department of physics, Ahar Branch, Islamic Azad University, Ahar, Iran