Analysis and Simulation of short-channel effects in metal- semiconductor field effect transistor

A better multi-recessed4H–SiC metal semiconductor field effect transistor (MRD-MESFET) with double-recessed p-buffer layer (DRB-MESFET) is proposed in this paper. By introducing double-recessed p-buffer layer, the gate depletion layer is further modulated and higher drain saturation current and DC Trans conductance are obtained compared with the MRD-MESFET. The simulations show that the drain saturation current of the DRB-MESFET is about42.4% larger than that of the MRD –MESFET. The DC trans conductance of the DRB-MESFET is almost 15% higher than that of the MRD-MESFET and very close to that of double-recessed structure (DR-MESFET) at the bias conditions of Vgs =0 V and Vds =40 V .The proposed structure has an improvement of 26.1% and 74.2% in the output maximum power density compared with that of the MRD-MESFET and DR-MESFET, respectively In the meanwhile, the proposed structure possesses smaller gate-source capacitance, which results in better RF characteristics.

کلیدواژه ها:

4H–SiC MESFET Multi-recessed drift regions (MRD) ، Double-recessed p-buffer layer (DRB) ، Drain saturation current