High-efficiency Polycrystalline CdS/CdTe/InSb/CdTe Solar Cell with Step Doping Grading of Absorber and Back Surface Field layers
سال انتشار: 1396
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 469
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شناسه ملی سند علمی:
ITCT04_142
تاریخ نمایه سازی: 17 آبان 1396
چکیده مقاله:
In this paper, a novel single-junction polycrystalline cadmium sulfide/cadmium telluride (CdS/CdTe) solar cell by means of the InSb absorber layer between cadmium telluride absorber layers and step doping grading of absorber and back surface field layers has been presented. By inserting the InSb absorber layer and step doping grading of absorber and back surface field layers, the conversion efficiency is increased by about 40% compared with the reference cell because of the built-in electric field and high photogeneration imposed by the the InSb absorber layer and step doping grading of absorber and back surface field layers, respectively. Using calibrated simulations with experimental data of fabricated CdS/CdTe solar cell, the open circuit voltage, short circuit current density, fill factor and conversion efficiency of proposed solar cell structure are 1000 mV, 28.73 mA/cm2, 0.8763 and 25.19% under global AM 1.5 conditions, respectively.
کلیدواژه ها:
نویسندگان
Malihe Mahoodi
Department of Electrical Engineering, Bahar Institute of Higher Education, Mashahd, Iran
Saeid Marjani
Department of Electrical Engineering, Ferdowsi University of Mashhad, Mashhad, Iran