Pulsed DC- Plasma Assisted Chemical Vapor Deposition of α-Rich Nanostructured Tantalum Film: Synthesis and Characterization
محل انتشار: ماهنامه بین المللی مهندسی، دوره: 30، شماره: 5
سال انتشار: 1396
نوع سند: مقاله ژورنالی
زبان: انگلیسی
مشاهده: 420
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شناسه ملی سند علمی:
JR_IJE-30-5_001
تاریخ نمایه سازی: 6 شهریور 1396
چکیده مقاله:
This paper is an attempt to synthesize nanostructured tantalum films on medical grade AISI 316L stainless steel (SS) using pulsed DC plasma assisted chemical vapor deposition (PACVD). The impact of duty cycle (17-33%) and total pressure (3-10 torr) were studied using field emission scanning electron microscopy (FESEM), grazing incidence x-ray diffraction (GIXRD), nuclear reaction analysis (NRA), proton induced x-ray emission (PIXE) and Rockwell indentation methods. The optimizeddeposition conditions for making the best film characteristics in terms of deposition rate, purity and maximum α-phase was recognized. Also, the results showed that using a near stoichiometric TaNinterlayer in this technique improves the film adhesion strength and considerably increases Ta film purity. The NRA analysis results indicated that the pulsed DC-PACVD is capable of producing Ta films with negligible amount of residual hydrogen which makes films needless to post bake treatment
کلیدواژه ها:
Tantalum ، Tantalum Nitride ، AISI 316L Stainless Steel ، Pulsed DC- Plasma Assisted Chemical Vapor ، Deposition ، Characterization
نویسندگان
h Ghorbani
Department of Materials Eng., Tarbiat Modares University, Tehran, Iran
a Abdollah-zadeh
Department of Materials Eng., Tarbiat Modares University, Tehran, Iran
a Poladi
Faculty of Materials Science and Eng., Semnan University, Semnan, Iran
m Hajian
Department of Materials Science and Eng., Shahrood University of Technology, Shahrood, Iran