ZSiC based CMOS for Oxygen Gas Sensor

Experimental characterization and quantum chemical calculations were performed to evaluate the performance of a Zigzag Silicon Carbon Nanoribbon (ZSiC) based CMOS oxygen gas sensors. In addition, we have shown that oxygen can alter the current-voltage characteristic of zigzag silicon carbon nanoribbon and create new fluctuations resistance. These alternations are made due to discontinuities in the combination of orbitals along the silicon carbon nanoribbon. This decoration alters the discontinuities and creates more visible fluctuations. Also, in low bias voltages, the changes are similar in all the cases. The study demonstrates that the sensitivity of the structure to the oxygen gas is significantly higher than the same normal sample. This phenomenon was studied further by comparing the reaction energy when O2 is exposed to ZSiC with density functional theory (DFT) calculations

کلیدواژه ها:

Oxygen Gas Sensor ، Transport ، sensitivity ، Silicon Carbon Nanoribbon