Design of Carbon Nanotube Field Effect Transistorsfor A/D circuit design

Carbon Nanotube Field Effect Transistors model is presented in simulation for electronic circuitdesign. The model is grounded on parameters extracted from quantum mechanical simulations of thedevice dependent on nanotube diameter and oxide capacitance. A relative error has been witnessed incomparison of the simulated output and transfer characteristics with output and transfer characteristicsin numerical model. A novel procedure has been proposed to determine values ofCarbon Nanotube Field Effect Transistors. The proposed model has been used in simulator to designA/D electronic circuits, indicating significance of quantum capacitance dependent on polarizationvoltage and investigating effects of carbon nanotube quantum resistances.

کلیدواژه ها:

Carbon Nanotube Field Effect Transistors ، modeling ، digital circuit design