Analysis of Loading Effect between Stages in Switched Pi/T and Bridged-T Attenuators

This paper presents an analytical evaluation of theloading effect between the stages in a digital step attenuator withswitched π/T/bridge-T structure. Based on the results of theanalysis, an X-band 6-bit attenuator is designed in 0.18 μmCMOS technology with attenuation coverage and LSB of 31.5 dBand 0.5 dB, respectively. The RMS gain error and the RMS phaseerror are less than 0.29 dB and 1.7 degree at 8-12 GHz,respectively.

کلیدواژه ها:

Attenuator ، CMOS switch ، loading effect ، digital step attenuator ، rms gain error ، rms phase error