Design of ultra-wideband low noise amplifier with enhanced current reused

This paper presents design methodology for ultra-wideband flat-gain low noise amplifier (LNA) with the enhanced current reused. We used the shunt resistive feedback as well as series inductor in the transistor's gate and drain of current reused. The current reuse technique is used for better band-width performance of amplifier. To have a low noise figure, use of series inductor's in transistor's drain in current reused technique is suggested. Also, these series inductors result in a good input matching. In this work the TSMC 0.18μm CMOS technology is used, where simulation results shows 15.84±0.7 dBgain and 2.5±0.9 dB noise figure (NF) with 3.1–10.6-GHz bandwidth.

کلیدواژه ها:

low noise amplifier (LNA) ، Current reuse ، ultra-wideband (UWB) ، noise figure (NF)