Circuit Model of Carrier and Photon Dynamics in Semiconductor Self Assembled Quantum Dot Laser

In this work, for the first time, we present circuit-level implementation of self assembled (SA) InGaAs-GaAs QD-laser, based on the standard rate equations. By using the presented model, the effect of carrier dynamics on the QD laser performance is investigated. The simulated results show that the retarded carrier relaxation due to phonon bottleneck degrades the threshold current, 3dB frequency and the external quantum efficiency of QD laser which is in agreement with the results reported by other researchers. The model explains excellently the experimental results found in self-assembled InGaAs-GaAs quantum dot laser.

کلیدواژه ها:

Self assembled quantum dot ، wetting layer ، phonon bottleneck ، external quantum efficiency ، quantum well