Study of a nano-Scale Length Tri-Gate FinFET Based on 3-D Simulations

In this paper, channel length changings are studied for Trigate SOI FinFET based on a 3-D simulation. Changing channel length is between 10 to 100 nm. output characteristics, threshold voltage, subthreshold slope and drain induced barrier lowering (DIBL), gm, ro are investigated.

کلیدواژه ها:

Trigate FinFET ، SOI ، SCEs ، Vth ، subthreashold slop