The vacancy and doping effect in Graphene nano-ribbons in the presence of an external perpendicular magnetic field

In this paper, we study the effect of vacancies and a substitutional doping of nano- ribbon graphene withN,B in a graphene nano-ribbon field-effect transistor (GNR-FET) in the presence of an external perpendicular magnetic field. Our calculations based on non-equilbrium green’s function (NEGF). The nearest neighbor tight-binding model based on pzorbital construct the device Hamiltonian. The simulation results indicate the device current is degraded because the vacancy defect act as scattering and the conductance decreases due to defects compared with the perfect nanoribbons.

کلیدواژه ها:

Vacancy ، Substitutional doping ، Tight- Tight-binding ، Magnetic field ، Graphene nano-ribbon