Simulation Study of Electrical Characteristics in Nanoscale Asymmetric Double Gate GaSb Junctionless Transistor

This paper explores the electrical characteristics of GaSb double gate junctionless transistor in nanoscaleregime. The benefits of high mobility GaSb and the newly proposed junctionless transistor are merged to improve the electrical characteristics of this device. Impact of structural parameters on the performance of junctionless transistor is thoroughly investigated. Increasing the channel doping results in both on- state and off-state current enhancement. Employing HfO2 as the gate insulator results in lower leakage current in comparison with the case that Si3N4 is considered as the gate oxide. Unlike the conventional junctionless transistor, asymmetric device is proposed in which the channel doping concentration is lower than the source/drain values. This asymmetric doping profile provides higher Ion/Ioff ratio, steep subthreshold slope, and accordingly results in reduction of the short channel effects in III-V junctionless transistor.

کلیدواژه ها:

Double gate MOSFET ، Junctionless transistor ، Short channel effects ، III-V MOSFET ، Leakage current