transistor with considering edge relaxation

We present an atomistic 3-D self- consistent solution of Poisson and Schrödinger equations, based on thenon-equilibrium Green’s Function (NEGF) formalism and tight- binding approximation, for a defected Graphenenanoribbon field effect transistor (GNRFET). Moreover, we consider the effect of V2 (555-777) defect and show that the edge relaxation and applied defect intensely affect the transistor performance. In this study, the devicecharacteristics are studied and compared with the perfect GNRFET.

کلیدواژه ها:

Graphene nanoribbon ، Field effect transistor ، V2 (555-777) defect ، NEGF ، Edge relaxation