Structural and photoluminescence properties of lead sulphide nanocrystalline thin films grown by CBD method on Si(100) substrate at different bath temperatures

The PbS nanocrystalline thin films were prepared by chemical bath deposition method on the Si(100)substrate at different bath temperatures (25, 45 and 65 °C). The PbS nanocrystals were identified by XRD and TEMtechniques. The photoluminescence of Si(100) substrate and PbS nanocrystalline films deposited on Si(100) werecompared and the results revealed that the PbS nanocrystals altered and notably enhanced the emission features of theSi(100) substrate. However, the shift of photoluminescence maximum emission wavelength of PbS nanocrystals withbath temperature was investigated. Furthermore, the single-peak fitting using Gaussian function was employed for thephotoluminescence spectrum of PbS on Si(100) substrate.

کلیدواژه ها:

Nanocrystalline PbS ، Photoluminescence ، Chemical Bath Deposition