PSi Effect on GaN Nanostructures by Pulsed DC Plasma Enhanced Chemical Vapor Deposition

Porous Silicon (PSi) Substrate was direct affect on morphology and stoichiometry of deposited top layers byphase vapor deposition method. In this report, Gallium nitride (GaN) nanostructures were synthesized by pulsed directcurrent plasma enhanced chemical vapor deposition (PECVD) on PSi. Gallium (Ga) metal and nitrogen plasma haveused as precursors. Plasma significantly affects on synthesis temperature of GaN nanostructures. The GaN nanostructureswere grown based on the direct reaction between Ga atoms and excited nitrogen species in the plasma environment onPSi substrate. FESEM image indicates that PSi substrate has nano scales porous under 100nm. Line energy dispersivespectroscopy (EDS) shows that the effect of porous surface on the increasing of Ga and nitrogen atoms to form the GaNnanostructures.

کلیدواژه ها:

GaN ، nanostructures ، plasma ، PECVD