Modeling and Characterization of graphene-silicon schottky diode as a THz detector

in this paper, we simulate graphene–silicon schottky barrier diode devices using technology computer aideddesign, TCAD tools software and compare schottky barrier Au-Si with Graphene-Si. Also, we investigate the physicalstructure of diode like Silicon concentration doping, position of the cathode when changing the thickness of the siliconand Effect of the width of graphene. This study present DC current-voltage, I-V characteristic of schottky diode and weobtain the optimal diode performance in DC mode. Also, we showed that by consideration of equivalent circuit of diodeand AC impedance, we can use it as a high frequency (THz) detector.

کلیدواژه ها:

graphene-silicon ، schottky diode ، high frequency ، AC impedance