Simulation and Modeling of Floating-Gate Non- Volatile Memory Performance: Focus on Oxide Thickness, Programming Speed, and Charge Transport Mechanisms

Over the past two decades, the advancement of non-volatile memory (NVM) technologies has largely depended on the continuous downscaling of MOS-based Flash devices. This paper presents a simulation and modeling study evaluating the performance of floating-gate memory devices, with a focus on key parameters such as programming speed and oxide thickness. The device structures were simulated using MATLAB and Silvaco Atlas software. Finally, the results are discussed in terms of the observed behaviors for programming speed and oxide thickness, providing insights into optimization strategies for enhanced device reliability and efficiency.

کلیدواژه ها:

Floating-gate memory ، Fowler-Nordheim tunneling ، Oxide thickness ، Non-volatile memory (NVM) ، Programming speed