Physical Properties Studies of Magnetron Sputtered WO۳ Thin Film

Recently the synthesis of metal oxide nanoparticles has attracted constant research interest by researchers worldwide. Tungsten oxide (WO۳) is one of the most widespread used metal nanostructures (WOx, x=۱-۳). The main use of WO۳ is its application in industry. WO۳ nanostructures due to their high surface to volume ratio can increase the efficiency of devices, such as sensor of toxic vapors, display smart windows and thermo-chromic device. In this work effect of annealing temperature is studied on the physical properties of WO۳ nanostructure by radio frequency (RF) magnetron sputtering on silicon substrate. Samples are annealed at different substrate temperatures of room temperature, ۳۰۰, ۴۰۰ and ۵۰۰°C under the same experimental conditions. Structural, morphological and electrical properties of the prepared samples are investigated using X-ray diffractometer (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and four-point probe (FPPT). Results show that by increasing the substrate temperature more uniform and denser WO۳ nanostructure film with higher crystallinity is formed. Moreover, increasing the substrate temperature results in decreasing a resistivity and a roughness of the grown films.

کلیدواژه ها:

Magnetron sputtering ، XRD ، AFM ، WO۳ ، SEM