Plasma Waves and Thermoelastic Effects in Rotating Semiconductor Layers within the Moore-Gibson-Thompson Model

The present article reports the rotation and plasma waves in a semiconductor thermoelastic medium. The proposed model is investigated for the microelongational layer in the modified Ohm’s law and Moore-Gibson-Thompson heat conduction (M-G-T). The combination of the modified Ohm’s law and M-G-T is an advanced framework for analyzing the behavior of materials obeying the electromagnetic, mechanical, and thermal interactions in the studied media. It is innovative to ensure the plasma waves effect produced from the used semiconductor material. The harmonic wave solution is utilized to derive the qualifier functions of the medium. The results are analyzed and illustrated for two values of rotation and time. Both the rotation and the plasma waves are effective and positively significant in the variation of the field quantity, while the obtained results are in consistent with the previous studies. Silicon is selected for the numerical scheme due to its relevance in manufacturing applications. The development of technologies in semiconducting media is utilized in a wide range of modern engineering applications, including smart materials and manufacturing processes.

کلیدواژه ها:

Microelongated thermoelastic ، Moore-Gibson-Thompson ، Plasma wave ، Semiconductor ، Rotation ، Modified Ohm&rsquo ، s law