Investigation of Thermoelectric Properties of Chalcogenide Semiconductors, MgBS۳(B = Hf, Zr): First Principle Approach

سال انتشار: 1404
نوع سند: مقاله ژورنالی
زبان: انگلیسی
مشاهده: 5

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شناسه ملی سند علمی:

JR_PPAM-5-2_006

تاریخ نمایه سازی: 26 فروردین 1405

چکیده مقاله:

Chalcogenide crystals are used in many different industries, but most notably as energy-conversion thermoelectric materials. We have calculated the Seebeck coefficient, electrical conductivity, electronic thermal conductivity, power factor, and figure of merit of MgBS۳ (B = Hf, Zr) chalcogenide crystals using semiclassical Boltzmann theory and first-principles calculations. A Quantum Espresso program is used to determine the Fermi level and compute the electronic properties. The transport properties are then computed using the BoltzTraP algorithm. We first make our materials available to the public. We report on our first principle investigation of MgBS۳ (B = Hf, Zr), a new class of ternary semiconductor alloys. The structural and elastic properties of these constituents demonstrate their low energy of formation and mechanical stability. In the valence band maximum, the observed electronic energy band gap data show a direct electronic transition including Hf-d states (B = Hf & Zr) along the Γ-symmetry direction, as well as mixed contributions from Mg-s states, Hf-d states, and Zr-d states. Furthermore, to assess the thermoelectric potential of pure MgHfS۳ and MgZrS۳, the temperature-dependent transport properties were examined. Among the simple measures employed were the "maximum" thermoelectric figure of merit, zT, power factor, Seebeck effect, and their anticipated thermal and electrical conductivity. It provided findings with improved zT values, higher PF, moderate Seebeck effect, and efficient thermal and electrical conductivity compared to the current state of bulk thermoelectric materials. Furthermore, we discover that it is highly improbable to get the necessary zT values for typical device applications by using several additional semiconductors, or chalcogenides perovskites, as described in our work. These results provide an excellent bulk chalcogenide database that is necessary for many potential applications in the renewable energy sector.

نویسندگان

Rilwan Balogun

School of Science and Technology, Pan-Atlantic University, Km ۵۲ Lekki-Epe Expressway, Eleko, Ibeju-Lekki, Lagos-state, Nigeria

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  • Rahman, M.H., Chowdhury, E.H., Redwan, D.A. and Hong, S., ۲۰۲۱. ...
  • Kalami, R. and Ketabi, S.A., ۲۰۲۳. Role of Linear Defects ...
  • Kalami, R. and Ketabi, S.A., ۲۰۲۳. Electronic and Thermoelectric Properties ...
  • Tsukagoshi, K., Alphenaar, B.W, Ago, H.,۱۹۹۹. Coherent transport of electron ...
  • Xiong, Z.H., Wu, D., Vardeny, Z.V., Shi, J., ۲۰۰۴. Giant ...
  • Dediu, V., Murgia, M., Matacotta, F. C., Taliani, C., Barbanera, ...
  • Shim, J.H., Raman, K.V., Park, Y.J., Santos, T.S., Miao, G.X., ...
  • Santos, T.S., Lee, J.S., Migdal, P., Lekshmi, I.C., Satpati, B., ...
  • Ouyang, M., Awschalom, D.D., ۲۰۰۳. Coherent spin transfer between molecularly ...
  • Petta, J.R., Slater, S.K., Ralph, D.C., ۲۰۰۴. Spin-dependent transport in ...
  • Sanvito, S., ۲۰۰۷. Memoirs of a spin, Nature Nanotechnology, ۲, ...
  • Ning, Z., Zhu, Y., Wang, J., Guo, H., ۲۰۰۸. Quantitative ...
  • Bentien, A., Christensen, M., Bryan, J., Sanchez, A., Paschen, S., ...
  • Shokri, A. and Salami, N., ۲۰۱۹. Thermoelectric properties in monolayer ...
  • Checkelsky, J.G. and Ong, N.P., ۲۰۰۹. Thermopower and Nernst effect ...
  • Yan, Y., Liang, Q.F., Zhao, H., Wu, C.Q. and Li, ...
  • Domínguez-Adame, F., Martín-González, M., Sánchez, D. and Cantarero, A., ۲۰۱۹. ...
  • Kalami, R., & Ketabi, S. A. ۲۰۲۱. Spin-dependent thermoelectric properties ...
  • Kalami, R., & Ketabi, S. A. ۲۰۲۳. Comparison of thermoelectric ...
  • Zhang, K. B., Tan, S. H., Peng, X. F., & ...
  • Song, T. T., Yang, N. X., Wang, R., Liao, H., ...
  • Nolas, G.S., Cohn, J.L., Slack, G.A., and Schujman, S.B., ۱۹۹۸. ...
  • May, A.F., Toberer, E.S., Saramat, A and Snyder, G.J., ۲۰۰۹. ...
  • Christensen, M., Lock, N., Overgaard, J., and Iversen, B.B., ۲۰۰۶. ...
  • Sales, B.C., Mandrus, D., and Williams, R.K., ۱۹۹۶. Science, ۲۷۲, ...
  • Rull-Bravo, M.; Moure, A.; Fernández, J.; Martín-González, M. Skutterudites as ...
  • Tan, G.; Zhao, L.-D.; Kanatzidis, M.G. Rationally designing high-performance bulk ...
  • Pichanusakorn, P.; Kuang, Y.; Patel, C.; Tu, C.; Bandaru, P. ...
  • Ouardi, S.; Fecher, G.H.; Felser, C.; Schwall, M.; Naghavi, S.S.; ...
  • Kim, H.; Kaviany, M. ۲۰۱۲. Effect of thermal disorder on ...
  • Kerdsongpanya, S.; Alling, B.; Eklund, P. ۲۰۱۲. Effect of point ...
  • Hoat, D. ۲۰۲۲. Comparative study of structural, electronic, optical and ...
  • Hoat, D.; Naseri, M.; Ponce-Perez, R.; Hieu, N.N.; Vu, T.V.; ...
  • Naseri, M.; Hoat, D.۲۰۱۹. Prediction of ۲D Li۲X (X = ...
  • Hong, M.; Wang, Y.; Liu, W.; Matsumura, S.; Wang, H.; ...
  • Tang, G.; Liu, J.; Zhang, J.; Li, D.; Rara, K.H.; ...
  • Gayner, C.; Kar, K.K. ۲۰۱۶. Recent advances in thermoelectric materials. ...
  • Ju, H.; Kim, M.; Kim, J. ۲۰۱۵. A facile fabrication ...
  • Han, C.; Sun, Q.; Li, Z.; Dou, S.X. ۲۰۱۶. Thermoelectric ...
  • Jeffery L. Gray, ۲۰۱۱. The physics of the solar cell, ...
  • Mukesh Jain, edition, II-VI Semiconductor Compounds, World scientific, ۱۹۹۳ ...
  • Liu, M.L.; Chen, I.W.; Huang, F.Q.; Chen, L.D. Improved thermoelectric ...
  • Sevik, C.; Çagın, T. ۲۰۱۰. Abinitio study of thermoelectric transport ...
  • Ibáñez, M.; Zamani, R.; LaLonde, A.; Cadavid, D.; Li, W.; ...
  • Zeier, W.G.; Heinrich, C.P.; Day, T.; Panithipongwut, C.; Kieslich, G.; ...
  • Navrátil, J.; Kucek, V.; Plecháˇcek, T.; Cernošková, E.; Laufek, F.; ...
  • Bekki, B.; Amara, K.; Marbouh, N.; Khelfaoui, F.; Benallou, Y.; ...
  • Guin, S.N.; Chatterjee, A.; Biswas, K. Enhanced thermoelectric performance in ...
  • Li, D.; Qin, X.; Zou, T.; Zhang, J.; Ren, B.; ...
  • Balogun, R.O., Olopade, M.A., Oyebola, O.O., Adewoyin, A.D., ۲۰۲۱. First-principle ...
  • Lee, J.K.; Oh, M.-W.; Ryu, B.; Lee, J.E.; Kim, B.-S.; ...
  • Ching, W.-Y.; Rulis, P. Electronic Structure Methods for Complex Materials: ...
  • Giannozzi, P.; Baroni, S.; Bonini, N.; Calandra, M.; Car, R.; ...
  • Hasan, S.; Adhikari, P.; Baral, K.; Ching, W.-Y. ۲۰۲۰. Conspicuous ...
  • Hasan, S.; Baral, K.; Li, N.; Ching, W.-Y. ۲۰۲۱. Structural ...
  • Kresse, G.; Furthmüller, J. ۱۹۹۶. Efficient iterative schemes for ab ...
  • Dharmawardhana, C.; Bakare, M.; Misra, A.; Ching, W.Y. ۲۰۱۶. Nature ...
  • Adhikari, P.; Khaoulaf, R.; Ez-Zahraouy, H.; Ching, W.-Y. ۲۰۱۷. Complex ...
  • Poudel, L.; Tamerler, C.; Misra, A.; Ching, W.-Y. ۲۰۱۷. Atomic-Scale ...
  • Hunca, B.; Dharmawardhana, C.; Sakidja, R.; Ching, W.-Y. Ab initio ...
  • Ching, W.Y.; Yoshiya, M.; Adhikari, P.; Rulis, P.; Ikuhara, Y.; ...
  • Balogun, Rilwan Oluwanishola., Olopade, Muteeu O, Oyebola, Olusola O and ...
  • Poudel, L.; Twarock, R.; Steinmetz, N.F.; Podgornik, R.; Ching, W.-Y. ...
  • Adhikari, P.; Li, N.; Shin, M.; Steinmetz, N.F.; Twarock, R.; ...
  • Mulliken, R.S. ۱۹۵۵. Electronic population analysis on LCAO–MO molecular wave ...
  • Dharmawardhana, C.; Misra, A.; Ching, W.-Y. Quantum mechanical metric for ...
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