Impact of Oxide Thickness on the Electrical and Analog/RF Performance of Strained Heterojunction Gate-All-Around Nanosheet FETs

In this paper, the quantitative assessment of Heterojunction Gate All Around Nanosheet Field Effect Transistor (Heterojunction GAA NS FET) and Conventional Gate All Around Nanosheet Field Effect Transistor (Conventional GAA NS FET) performance was evaluated for different oxide thicknesses ). The effect of electrostatic control on DC and designing analog circuits, such as transconductance generation factor (TGF), Early voltage ( ), output conductance ( ), transconductance ( ), cut off frequency have been investigated for all devices. Higher TGF and  was achieved with  for all devices. In the proposed Heterojunction GAA NS FET, we have used Germanium for the source region, Silicon/Germanium/Silicon (Si/Ge/Si) for the channel, and Silicon as the drain region. Incorporating strain in nanosheet and heterojunction structure devices can significantly improve device performance. Before using a model to analyz a semiconductor device, the model parameters must be accurately determined and elaborated. In this case, the Density Gradient (DG) equation, for a given electron Fermi-level distribution, has been solved self-consistently for the electrostatic potential, the Shockley-Read-Hall (SRH) equation for estimating carrier generation, bandgap narrowing for transport behavior and auger recombination. The general results show an improvement of approximately ۱۰% in drain current, transconductance, and unity-gain frequency, providing superior RF performance of the heterojunction structure compared to the conventional GAA NS FET.

کلیدواژه ها:

Nanosheet ، Heterojunction GAA NS FET ، Conventional GAA NS FET ، Density Gradient ، On-Off-state