Optimization of MoO۳/Ag/MoO۳ Multilayer Transparent Conductive Electrodes via Thermal Annealing for Optoelectronics Application

Transparent conductive electrodes (TCEs) are an indispensable component in optoelectronic devices and organic solar cells (OSCs). Recently, oxide/metal/oxide multilayers have been identified as promising structures (TCEs). In this context, we prepared MoO۳/Ag/MoO۳ (MAM) multilayer structures on glass substrates at different Ag thicknesses using RF and DC magnetron sputtering. Samples were prepared with Ag thicknesses ranging from ۵ to ۱۰ nm. As a result of varying the Ag midlayer thickness, the MA (۱۰nm) M trilayer structure with more desirable electrical, optical, and morphological properties compared to other samples was selected and was exposed to thermal annealing with an oxygen to argon flow ratio of ۲۰% at temperatures of ۴۰۰ and ۵۰۰ °C for ۲ h in an electric furnace. Investigations highlighted the prominent role of reactive thermal annealing in optimizing the properties of multilayer structures, which has led to improved stoichiometry of the MoO۳ layer and increased optical transmittance and electrical conductivity of trilayer structures. The MA(۱۰ nm, ۴۰۰ °C) M multilayers with a modified figure of merit of ۲۳.۸۶×۱۰-۳ (Ω-۱) as the optimal structure have potential application as TCEs in optoelectronic devices and (OSCs).

کلیدواژه ها:

Transparent Electrodes ، Trilayer ، RF Sputtering ، Thermal Annealing ، MoO۳ ، Ag