Improved Physical Properties of Zirconium Incorporation into the Iattice of Chromium Telluride Material

The successful synthesis of undoped and doped CrTe was achieved through electrochemical deposition. The film exhibited a ۲θ value of ۴۶.۵۱o and a hexagonal phase with orientations (۱۱۱), (۱۱۲), (۱۲۱), and (۲۰۰). The CrTe image exhibits a surface with compacted particles, indicating a favorable shaving surface. The absorption of photons is evident on the surface of the substrate with a well-packed grain size. The surface micrograph of the CrTe precursor was altererd by the addition of zirconium. The doped films exhibited a stone-like micro-grain in their surface morphology. As the dopant concentration increased, specific grains showed an enlargement and thickening of the stone-like nano-grains. The doped CrTe material successfully achieved a uniform deposition of nanoparticles across the entire solar substrate. There was a decrease in the material's thickness from ۱۰۴.۰۲ to ۱۰۳.۲۳ nm, accompanied by an increase in film resistivity from ۵.۴۹ to ۶.۰۳Ω.m. As a result, conductivity decreased from ۱.۸۲ to ۱.۶۵ S/m. The undoped exhibited an energy bandgap of ۱.۶۲ eV. The molar concentration of zirconium has an inverse relationship with the energy bandgap of doped CrTe, with the range decreasing from ۱.۶۸ eV at ۰.۱ mol, ۱.۴۲ eV ۰.۲ mol, and ۱.۴۱ eV ۰.۳ mol. Incorporating zirconium into the crystal lattice of chromium telluride (CrTe) introduces novel and distinct physical properties, primarily by modifying its optical and electrical characteristics. The key novelty is demonstrating a non-linear relationship between Zr concentration and surface morphology. The study identifies that ۰.۰۲ mol of Zr is the ideal amount for achieving superior dispersion and the finest grain structure. It also provides a clear mechanistic explanation for why a higher concentration (۰.۰۳ mol) fails, due to particle agglomeration.

کلیدواژه ها:

Photovoltaic ، Electrochemical deposition ، Bandgap ، Doping ، Thin films